Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers.
Sign Up to like & getrecommendations! Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c16905
Abstract: Heat dissipation plays a crucial role in the performance and reliability of high-power GaN-based electronics. While AlN transition layers are commonly employed in the heteroepitaxial growth of GaN-on-SiC substrates, concerns have been raised about their… read more here.
Keywords: across gan; aln transition; gan sic; transition layers ... See more keywords