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Published in 2024 at "IEEE Access"
DOI: 10.1109/access.2024.3462956
Abstract: Flyback converters with synchronous rectifiers are an important topic in power electronics, given their widespread use in various applications and the focus on efficiency improvement. However, flyback converters suffer from a high overvoltage across the…
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Keywords:
dead time;
active gate;
flyback;
flyback converters ... See more keywords
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Published in 2024 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2024.3357291
Abstract: Fast power transistors require a tight control of their switching trajectory to exploit them at full speed, without degrading reliability and delivered electromagnetic emission figures of merit. By using active gate drivers in place of…
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Keywords:
power transistors;
active gate;
gate;
gate drivers ... See more keywords
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Published in 2024 at "IEEE Transactions on Industry Applications"
DOI: 10.1109/tia.2024.3353153
Abstract: This paper presents a control method of fully digital active gate drivers in a three-phase inverter to simultaneously realize surge voltage reduction and efficiency enhancement. Generally, the surge voltages of power devices occur at each…
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Keywords:
gate;
active gate;
gate control;
three phase ... See more keywords
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Published in 2024 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2024.3440267
Abstract: The high switching speed of SiC mosfets is limited by the coupling noise in bridge-leg configurations. Conventional methods focus on the noise introduced by the gate–drain capacitance, which is suppressed by reducing the gate impedance…
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Keywords:
coupling noise;
active gate;
gate driver;
gate ... See more keywords
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Published in 2025 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2025.3586928
Abstract: In high-power applications, paralleling silicon carbide mosfets is commonly adopted to overcome the current limitation of a single device and achieve higher current capability. However, imbalanced dynamic currents during the switching process can lead to…
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Keywords:
current sharing;
branch;
auxiliary branch;
active gate ... See more keywords
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Published in 2024 at "Energies"
DOI: 10.3390/en17091997
Abstract: Due to the influence of parasitic internal parameters and junction capacitance, the silicon carbide (SiC) power devices are frequently marred by significant overshoots in current and voltage, as well as high-frequency oscillations during the switching…
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Keywords:
circuit;
switching transient;
sic mosfet;
active gate ... See more keywords