Effects of adding elements M (M = C, B, Mn, Al and Al + Co) on stability of amorphous semiconducting Fe–Si films
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DOI: 10.1007/s10854-018-9119-8
Abstract: Amorphous semiconducting Fe–Si film with direct optical band gap (Eg) has become a promising candidate material for optoelectronic devices. It can avoid the difficulties of crystalline materials preparation. The key to expanding its applications is… read more here.
Keywords: amorphous films; effects adding; adding elements; amorphous semiconducting ... See more keywords