Adsorption characteristics composition of Ge and Si on 4H-SiC(0 0 0 1) surface
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125370
Abstract: Abstract Silicon (Si) and germanium (Ge) are two important materials for hetero-epitaxy of 4H-silicon carbide (4H-SiC), so the First-principles calculation is employed to compare the difference of the adsorptions of Ge and Si atoms on… read more here.
Keywords: adsorption; adsorption energy; adsorbed atom; surface ... See more keywords