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Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2016.10.027
Abstract: Abstract Reconfigurable FETs (RFETs) are optimized in planar Fully Depleted (FD) SOI. Their basics, electrostatics and performance are studied and compared with standard 28 nm FDSOI and other RFETs results in the literature. The main challenge…
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Keywords:
field effect;
advanced cmos;
effect transistor;
reconfigurable field ... See more keywords
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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2943744
Abstract: The march toward dimensional scaling and higher performance has led the semiconductor industry to consider nonplanar topologies and different material systems. These choices have led to an increase in the local power dissipation and, correspondingly,…
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Keywords:
review self;
heating effects;
effects advanced;
self heating ... See more keywords
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Published in 2020 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2019.2942825
Abstract: Routing closure and design-for-manufacturability (DFM) challenges exacerbate nonrecurring engineering (NRE) costs, a steep barrier to entry for advanced sub-20-nm CMOS nodes, making low-volume fabrication of integrated circuits (ICs) almost intangible. For ICs in which the…
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Keywords:
cost design;
cmos nodes;
advanced cmos;
cell ... See more keywords
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Published in 2021 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-021-03570-7
Abstract: This work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New antenna designs for plasma induced…
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Keywords:
beol processes;
plasma;
plasma induced;
advanced cmos ... See more keywords