Advances in atomistic modeling for epitaxial growth of nitride semiconductors: DFT-based approach
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DOI: 10.1039/d5ce00542f
Abstract: The growth of high-quality epitaxial thin films of nitride semiconductors is esse1ntial for the development of energy-efficient power electronic devices as well as advanced optoelectronic applications. To enhance the performance... read more here.
Keywords: advances atomistic; epitaxial growth; modeling epitaxial; growth ... See more keywords