Self-Contained Analog Switching in AgHfO3-x Memristor with Lattice-Sourced Ag Filament for Reliable Synaptic Behavior and Associative Learning.
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DOI: 10.1002/smll.202505032
Abstract: HfO2 is one of the most widely studied materials for resistive switching, owing to its CMOS compatibility and scalable performance. However, HfO2-based memristors suffer from stochastic filament formation, high device-to-device variability, and limited analog tunability… read more here.
Keywords: associative learning; analog switching; device; aghfo3 memristor ... See more keywords