LAUSR

Aging Benefits in Nanometer CMOS Designs

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1 Published in 2017 at "IEEE Transactions on Circuits and Systems II: Express Briefs"

DOI: 10.1109/tcsii.2016.2561206

Abstract: In this brief, we show that bias temperature instability (BTI) aging of MOS transistors, together with its detrimental effect for circuit performance and lifetime, presents considerable benefits for static power consumption due to subthreshold leakage… read more here.

Keywords: power reduction; power; static power; bti aging ... See more keywords