Selective anisotropic etching of GaN over AlGaN for very thin films
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/1.5012530
Abstract: Selective etching of gallium nitride (GaN) over aluminum gallium nitride (AlxGa1-xN) with inductively coupled plasma and reactive ion etching (RIE) was examined using only chlorine and oxygen gasses. Etch selectivity was heavily influenced by the… read more here.
Keywords: al0 25ga0; 25ga0 75n; oxygen flow; gan al0 ... See more keywords
Low-Power pH Sensor Based on Narrow Channel Open-Gated Al0.25Ga0.75N/GaN HEMT and Package Integrated Polydimethylsiloxane Microchannels
Sign Up to like & getrecommendations! Published in 2020 at "Materials"
DOI: 10.3390/ma13225282
Abstract: pH sensors with low-power and strong anti-interference are extremely important for industrial online real-time detection. Herein, a narrow channel pH sensor based on Al0.25Ga0.75N/GaN high electron mobility transistor (HEMT) with package integrated Polydimethylsiloxane (PDMS) microchannels… read more here.
Keywords: sensor based; power; al0 25ga0; low power ... See more keywords