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Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c17934
Abstract: Alloying Al2O3 with Ga2O3 to form β-(AlxGa1-x)2O3 opens the door to a large number of new possibilities for the fabrication of devices with tunable properties in many high-performance applications such as optoelectronics, sensing systems, and…
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Keywords:
coordination interstitial;
al0 2ga0;
stability al0;
interstitial stability ... See more keywords
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Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4993569
Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon…
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Keywords:
modulation;
al0 2ga0;
2ga0 2o3;
2o3 ga2o3 ... See more keywords
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Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0143236
Abstract: We report on the design, realization, and characterization of optically pumped micropillar lasers with low-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As dielectric Bragg reflectors (DBRs) instead of commonly used GaAs/AlGaAs DBRs. A layer of (In, Ga)As quantum dots is embedded…
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Keywords:
al0 2ga0;
al0;
optically pumped;
micropillar lasers ... See more keywords
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Published in 2021 at "AIP Advances"
DOI: 10.1063/6.0000977
Abstract: InAsSb/AlGaSb systems have potential in mid-wavelength infrared detection and laser fields. Thus, their heteroepitaxial crystal quality and heterointerface are of great importance. Herein, the quantum well structure based on InAs0.8Sb0.2/Al0.2Ga0.8Sb was grown by interruption with…
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Keywords:
al0 2ga0;
8sb0 al0;
microscopy;
inas0 8sb0 ... See more keywords