Emission and HR-XRD study of MBE structures with InAs quantum dots and AlGaInAs strain reducing layers
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DOI: 10.1016/j.spmi.2018.10.005
Abstract: Abstract GaAs/Al0.30Ga0.70As quantum wells (QWs) with InAs quantum dot (QD) arrays covered by the different capping layers: Al0.30Ga0.70As or Al0.1Ga0.75In0.15As, have been investigated by means of the photoluminescence (PL) and high resolution X-ray diffraction (HR-XRD)… read more here.
Keywords: 30ga0 70as; al0 1ga0; al0 30ga0; xrd ... See more keywords