A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)
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DOI: 10.1039/c9ce00813f
Abstract: We report a unique AlN/AlInN bi-layer buffer design to enable the growth of textured c-axis wurtzite Al0.36In0.64N epilayer on a Si (111) substrate, which creates the possibility to grow high crystal quality Al0.36In0.64N. read more here.
Keywords: enable growth; high crystal; crystal quality; al0 36in0 ... See more keywords