Strain-induced novel properties of alloy nitride nanotubes
Sign Up to like & getrecommendations! Published in 2020 at "Computational Materials Science"
DOI: 10.1016/j.commatsci.2020.109589
Abstract: Abstract Nanotubes have become the focus of interest in recent years because of their unique properties that make them natural candidates for many devices. The junction of two different nanotubes can form alloys imparting new… read more here.
Keywords: al0 5ga0; strain induced; alloy nanotubes; strain ... See more keywords
Electronic structure of Cs adsorption on Al0.5Ga0.5N(0001) surface
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105213
Abstract: Abstract Using density functional theory and ultra-soft pseudopotential method based on first principles calculations, the adsorption energies, work functions, dipole moments, partial density of states, Mulliken population and charge differential densities of Cs adsorbed Al0.5Ga0.5N(0001)… read more here.
Keywords: adsorption; al0 5ga0; 5ga0 0001; electronic structure ... See more keywords
High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5001979
Abstract: An Al0.6Ga0.4N/Al0.5Ga0.5N metal–semiconductor–metal (MSM) deep-ultraviolet (DUV) photodetector was developed. It possesses both high photosensitivity and high rejection ratios in comparison to photomultiplier tubes (PMTs). The photodetector was designed to have a two-dimensional electron gas layer… read more here.
Keywords: al0 6ga0; 6ga0 al0; photodetector; al0 ... See more keywords
Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5010859
Abstract: The influence of open-core threading dislocations on the bias-dependent external quantum efficiency (EQE) of bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductor-metal (MSM) photodetectors (PDs) is presented. These defects originate at the Al0.5Ga0.5N/AlN interface and terminate on the Al0.5Ga0.5N surface… read more here.
Keywords: al0 5ga0; open core; metal; core threading ... See more keywords