Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5023996
Abstract: The excitonic optical properties of an Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum well structure were studied by photoluminescence (PL) spectroscopy at various temperatures. An analysis of the temperature dependence of PL peak energy revealed the stronger localization of… read more here.
Keywords: temperature; al0 60ga0; multiple quantum; excitons biexcitons ... See more keywords
Advantage of SiO2 Intermediate Layer on the Electron Injection for Ti/n-Al0.60Ga0.40N Structure
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3007363
Abstract: In this work, and experimentally propose inserting an SiO2 intermediate layer between the Ti and n-AlGaN layer to improve the electron injection efficiency. When the SiO2 intermediate layer is adopted, the SiO2 layer can share… read more here.
Keywords: al0 60ga0; electron injection; intermediate layer; sio2 intermediate ... See more keywords