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Published in 2024 at "Nano letters"
DOI: 10.1021/acs.nanolett.4c06178
Abstract: Ferroelectric (Fe) materials-based devices show great promise for nonvolatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature nonvolatile memory applications. Our 30 nm…
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Keywords:
metal ferroelectric;
al0 68sc0;
32n sic;
68sc0 32n ... See more keywords
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Published in 2022 at "Micromachines"
DOI: 10.3390/mi13040625
Abstract: Piezoelectric micromirrors with aluminum nitride (AlN) and aluminum scandium nitride (Al0.68Sc0.32N) are presented and compared regarding their static deflection. Two chip designs with 2 × 3 mm2 (Design 1) and 4 × 6 mm2 (Design…
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Keywords:
static high;
aln;
voltage;
al0 68sc0 ... See more keywords