Molecular beam epitaxy and characterization of Al0.6Ga0.4N epilayers
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.10.048
Abstract: Abstract We have performed a detailed investigation of the molecular beam epitaxy of AlGaN epilayers on AlN template on sapphire substrate. The effects of various growth parameters, including nitrogen flow rate, and Al and Ga… read more here.
Keywords: molecular beam; epitaxy characterization; al0 6ga0; beam epitaxy ... See more keywords
High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5001979
Abstract: An Al0.6Ga0.4N/Al0.5Ga0.5N metal–semiconductor–metal (MSM) deep-ultraviolet (DUV) photodetector was developed. It possesses both high photosensitivity and high rejection ratios in comparison to photomultiplier tubes (PMTs). The photodetector was designed to have a two-dimensional electron gas layer… read more here.
Keywords: al0 6ga0; 6ga0 al0; photodetector; al0 ... See more keywords