Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44
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DOI: 10.1063/5.0145051
Abstract: Quaternary AlGaAsSb alloys have exhibited low excess noise characteristics as gain regions in avalanche photodiodes. In this work, optical spectroscopy techniques are used to demonstrate the recombination dynamics in molecular beam epitaxy grown Al0.85Ga0.15As0.56Sb0.44 with… read more here.
Keywords: recombination; grown al0; al0 85ga0; 15as0 56sb0 ... See more keywords
Au-free V/Al/Pt Contacts on n-Al0.85Ga0.15N:Si Surfaces of Far-UVC LEDs
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DOI: 10.1149/2162-8777/ad78ff
Abstract: The feasibility of replacing the V/Al/Ni/Au contact on n-Al0.85Ga0.15N:Si commonly used in far-UVC LEDs with a Au-free V/Al/Pt contact has been investigated. It is shown that the V and Pt layer thicknesses play an important… read more here.
Keywords: al0 85ga0; 85ga0 15n; uvc leds; far uvc ... See more keywords