Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond.
Sign Up to like & getrecommendations! Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c02912
Abstract: Radio frequency (RF) microelectromechanical systems (MEMS) based on Al1-xScxN are replacing AlN-based devices because of their higher achievable bandwidths, suitable for the fifth-generation (5G) mobile network. However, overheating of Al1-xScxN film bulk acoustic resonators (FBARs)… read more here.
Keywords: conductivity aluminum; aluminum scandium; thermal conductivity; conductivity ... See more keywords
On the exceptional temperature stability of ferroelectric Al1-xScxN thin films
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0053649
Abstract: Through its dependence on low symmetry crystal phases, ferroelectricity is inherently a property tied to the lower temperature ranges of the phase diagram for a given material. This paper presents conclusive evidence that in the… read more here.
Keywords: ferroelectric al1; temperature; temperature stability; al1 xscxn ... See more keywords
In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications
Sign Up to like & getrecommendations! Published in 2023 at "Materials"
DOI: 10.3390/ma16051781
Abstract: Aluminum scandium nitride (Al1−xScxN) film has drawn considerable attention owing to its enhanced piezoelectric response for micro-electromechanical system (MEMS) applications. Understanding the fundamentals of piezoelectricity would require a precise characterization of the piezoelectric coefficient, which… read more here.
Keywords: al1 xscxn; xscxn; synchrotron xrd; situ synchrotron ... See more keywords
Compensation of the Stress Gradient in Physical Vapor Deposited Al1−xScxN Films for Microelectromechanical Systems with Low Out-of-Plane Bending
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13081169
Abstract: Thin film through-thickness stress gradients produce out-of-plane bending in released microelectromechanical systems (MEMS) structures. We study the stress and stress gradient of Al0.68Sc0.32N thin films deposited directly on Si. We show that Al0.68Sc0.32N cantilever structures… read more here.
Keywords: al1 xscxn; stress; plane bending; stress gradient ... See more keywords
Al1−xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion
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DOI: 10.3390/mi13081282
Abstract: Ferroelectric thin films of wurtzite-type aluminum scandium nitride (Al1−xScxN) are promising candidates for non-volatile memory applications and high-temperature sensors due to their outstanding functional and thermal stability exceeding most other ferroelectric thin film materials. In… read more here.
Keywords: xscxn thin; al1 xscxn; thermal expansion; thin films ... See more keywords