Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing
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DOI: 10.3390/mi14061100
Abstract: A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al2O3/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD)… read more here.
Keywords: aln gan; mis hemts; aln; gan mis ... See more keywords