Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer
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DOI: 10.1007/s11664-017-5946-2
Abstract: To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each… read more here.
Keywords: gallium zinc; layer; aluminum oxide; al2o3 barrier ... See more keywords