Effect of substrate morphology on the deposition behavior of α-Al2O3 films by room temperature granule spray in vacuum process
Sign Up to like & getrecommendations! Published in 2021 at "Ceramics International"
DOI: 10.1016/j.ceramint.2021.02.241
Abstract: ABSTRACT In this study, we investigated the influence of surface morphology of a hard substrate on the deposition behavior of α-Al2O3 films coated by a granule spray in vacuum (GSV) process at room temperature. Three… read more here.
Keywords: surface; deposition behavior; al2o3 films; substrate ... See more keywords
Optical and electronic properties of (Al Ga1−)2O3/Al2O3 (x>0.4) films grown by magnetron sputtering
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.158765
Abstract: Abstract Systematic investigations of the optical and electronic properties are reported for ultrathin (AlxGa1-x)2O3/Al2O3 films with higher Al contents x (> 0.4) prepared by magnetron sputtering method. The X-ray diffraction results revealed the films were… read more here.
Keywords: alxga1 2o3; optical electronic; 2o3 al2o3; electronic properties ... See more keywords
Plasma-induced damage and annealing repairing in ALD-Al2O3/PECVD-SiNx stacks
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.05.010
Abstract: Abstract We study the effect of plasma-enhanced chemical vapor deposition (PECVD) SiNx process to atomic layer deposited (ALD) Al2O3 films on crystalline silicon surface passivation. The plasma-induced damage on Al2O3 films is affected by the… read more here.
Keywords: plasma induced; pecvd sinx; ald al2o3; al2o3 films ... See more keywords
Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5021411
Abstract: We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density… read more here.
Keywords: mos capacitors; al2o3 films; characterization amorphous; al2o3 ... See more keywords