Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams
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DOI: 10.1063/1.5026831
Abstract: Defects in the Al2O3(25 nm)/GaN structure were probed by using monoenergetic positron beams. Al2O3 films were deposited on GaN by atomic layer deposition at 300 °C. Temperature treatment above 800 °C leads to the introduction of vacancy-type defects… read more here.
Keywords: structure probed; monoenergetic positron; positron beams; gan structure ... See more keywords