Effects of GaSb surface preparation on the characteristics of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition
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DOI: 10.1116/1.4967233
Abstract: The electrical, structural, and chemical properties of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) fabricated on Sb-rich (2 × 5) and Sb-stabilized (1 × 3) surfaces by atomic layer deposition are characterized. A combination of the transmission electron microscopic, x-ray photoelectron spectroscopic,… read more here.
Keywords: hfo2 al2o3; surface; al2o3 gasb; deposition ... See more keywords