Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealing
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DOI: 10.1088/1361-6641/aafdbd
Abstract: This work investigated characteristics of Al2O3/native oxide/n-GaN MOS capacitors by post-metallization annealing (PMA). A native oxide interlayer which composed of e- and γ-Ga2O3 phases (Native oxide) and the reduced amount of one (Reduced) on n-GaN… read more here.
Keywords: characteristics al2o3; al2o3 native; native oxide; oxide ... See more keywords