Articles with "al2o3 passivation" as a keyword



Effect of Al2O3 passivation layer and optimization of atomic-layer-deposited Zn-Sn-O and Al-Zn-Sn-O thin-film transistors

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Published in 2025 at "Journal of Materials Chemistry C"

DOI: 10.1039/d5tc02175h

Abstract: This study investigated the effects of aluminum oxide (Al2O3) passivation layers on amorphous zinc tin oxide (a-ZTO) and amorphous aluminum zinc tin oxide (a-AZTO) thin films, along with their corresponding... read more here.

Keywords: layer; passivation layer; effect al2o3; al2o3 passivation ... See more keywords

Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures

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Published in 2018 at "AIP Advances"

DOI: 10.1063/1.5037925

Abstract: Metal oxide semiconductor field effect transistors (MOSFETs) with Al2O3 passivation layer grown by atomic layer deposition (ALD) at 200 oC and 300 oC were fabricated on hydrogen-terminated polycrystalline diamond by using gold mask technology. The… read more here.

Keywords: grown atomic; layer; atomic layer; mosfets al2o3 ... See more keywords

Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures

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Published in 2025 at "Applied Physics Letters"

DOI: 10.1063/5.0252966

Abstract: In the present work, the role of ex situ Al2O3 passivation in in situ SiNx/AlN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) to boost device performance and thermal stability during the high-temperature operations has been thoroughly investigated. At… read more here.

Keywords: situ al2o3; al2o3 passivation; mis hemts; device performance ... See more keywords
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Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

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Published in 2023 at "Nanomaterials"

DOI: 10.3390/nano13111740

Abstract: In this paper, the effect of atomic layer deposition (ALD)-derived Al2O3 passivation layers and annealing temperatures on the interfacial chemistry and transport properties of sputtering-deposited Er2O3 high-k gate dielectrics on Si substrate has been investigated.… read more here.

Keywords: chemistry; al2o3 passivation; derived al2o3; gate ... See more keywords