Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC
Sign Up to like & getrecommendations! Published in 2019 at "Materials Letters"
DOI: 10.1016/j.matlet.2019.03.009
Abstract: Abstract In this paper, the effect of post deposition annealing (PDA) on the chemical, structural, and electrical properties of the high-k Y2O3/Al2O3 stacking dielectric on p-type 4H-SiC were studied. High-k dielectric provides a physically thicker… read more here.
Keywords: al2o3 stacking; post deposition; y2o3 al2o3; effect ... See more keywords
Impact of the HfO2/Al2O3 stacking order on unipolar RRAM devices
Sign Up to like & getrecommendations! Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.05.024
Abstract: In this work, Ni/HfO2/Al2O3/n+-Si and Ni/Al2O3/HfO2/n+-Si RRAM devices have been investigated with the purpose to determine the role of the HfO2/Al2O3 stacking order in the electrical properties and the resistive switching phenomena in unipolar RRAM… read more here.
Keywords: hfo2 al2o3; order; rram devices; stacking order ... See more keywords