Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements
Sign Up to like & getrecommendations! Published in 2023 at "AIP Advances"
DOI: 10.1063/5.0145286
Abstract: Recent demonstrations of grafted p-n junctions combining n-type GaN with p-type semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like heterostructures. Ultrathin dielectrics deposited by atomic layer deposition (ALD) serve both as a double-sided surface… read more here.
Keywords: band; interfacial band; ald zro2; ultrathin ald ... See more keywords
Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment.
Sign Up to like & getrecommendations! Published in 2018 at "Nanotechnology"
DOI: 10.1088/1361-6528/aab0fb
Abstract: Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed… read more here.
Keywords: ald zro2; atomic layer; graphene; layer deposited ... See more keywords