Strain Relaxation of Al‐Rich α‐(AlGa)2O3 and α‐Al2O3/Ga2O3 Superlattice on m‐Plane Sapphire Substrates by Plasma‐Assisted Molecular Beam Epitaxy
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202500136
Abstract: The strain relaxation of Al‐rich α‐(AlxGa1‐x)2O3 single layers with x > 0.6 and an α‐Al2O3/Ga2O3 superlattice structure grown on m‐plane sapphire substrates by molecular beam epitaxy is investigated. Symmetrical full‐width half maximum values of X‐ray… read more here.
Keywords: strain relaxation; alga 2o3; relaxation; ga2o3 superlattice ... See more keywords
Investigation of interface traps in β-(AlGa)2O3/Ga2O3 heterostructures by dynamic capacitance dispersion technique
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0208449
Abstract: In this work, interface traps in β-(AlGa)2O3/Ga2O3 modulation-doped field effect transistor (MODFET) were investigated qualitatively and quantitatively by means of dynamic capacitance dispersion technique. The fabricated β-(AlGa)2O3/Ga2O3 MODFET showed drain current modulation demonstrating the transistor… read more here.
Keywords: 2o3 ga2o3; dispersion; capacitance; interface ... See more keywords