Deep-level defects in high-voltage AlGaAs p–i–n diodes and the effect of these defects on the temperature dependence of the minority carrier lifetime
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/5.0018317
Abstract: The variation of the effective lifetime of minority carrier lifetime τeff with temperature has been studied in the temperature range 300–580 K in AlxGa1−xAs base regions of p+–p0–i–n0–n+ high-voltage GaAs–AlGaAs diodes grown by liquid-phase epitaxy. It… read more here.
Keywords: high voltage; temperature; algaas diodes; level ... See more keywords