Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
Sign Up to like & getrecommendations! Published in 2017 at "Quantum Electronics"
DOI: 10.1070/qel16365
Abstract: The results of the development and fabrication of laser diode bars (λ = 800 – 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and… read more here.
Keywords: based algaas; diode; gaas quantum; laser diode ... See more keywords
The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ac0d98
Abstract: Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm2 V s−1 if the AlGaAs alloy is grown after the GaAs. Surprisingly, the mobilities may… read more here.
Keywords: inverted algaas; mobility; hybrid systems; gaas interface ... See more keywords
Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
Sign Up to like & getrecommendations! Published in 2018 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-018-2503-8
Abstract: We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for… read more here.
Keywords: array solar; gaas nanowire; using algaas; algaas gaas ... See more keywords
Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs-GaAs- heterostructure to carrier-substrate
Sign Up to like & getrecommendations! Published in 2023 at "Technical Physics"
DOI: 10.21883/tp.2023.01.55451.166-22
Abstract: Development of lift-off technique of AlGaAs/GaAs- heterostructures, grown by the Metalorganic vapour-phase epitaxy, to GaAs carrier-substrate using silver-containing paste or Au-In compound has been carried out. Forming process of frontal ohmic contact to GaAs n-type… read more here.
Keywords: algaas gaas; lift technique; emitting diodes; carrier substrate ... See more keywords
Velocity overshoot degradation in short-channel AlGaAs/GaAs HEMTs due to the minimum electron acceleration lengths
Sign Up to like & getrecommendations! Published in 2017 at "Journal of the Korean Physical Society"
DOI: 10.3938/jkps.71.355
Abstract: Short-channel AlGaAs/GaAs High Electron Mobility Transistors (HEMTs) with gate lengths ranging up to 10 nm were fabricated using electron-beam lithography process. Transconductance starts to rise rapidly as the gate length becomes on the order of… read more here.
Keywords: short channel; velocity; acceleration; channel algaas ... See more keywords