Scaling of the breakdown in the impurity band of doped GaAs/AlGaAs quantum well demonstrating virtual Anderson transition
Sign Up to like & getrecommendations! Published in 2017 at "Solid State Communications"
DOI: 10.1016/j.ssc.2017.05.010
Abstract: Abstract We observed breakdown behavior for highly doped and low compensated p-type layers located within the central part of GaAs/AlGaAs quantum wells at rather small values of the applied bias. This behavior is attributed to… read more here.
Keywords: impurity band; gaas algaas; algaas quantum;
Self-Consistent Study of GaAs/AlGaAs Quantum Wells with Modulated Doping
Sign Up to like & getrecommendations! Published in 2023 at "Nanomaterials"
DOI: 10.3390/nano13050913
Abstract: In this work, the characterization and analysis of the physics of a GaAs quantum well with AlGaAs barriers were carried out, according to an interior doped layer. An analysis of the probability density, the energy… read more here.
Keywords: gaas algaas; study gaas; doped layer; consistent study ... See more keywords
Carrier Relaxation Dynamics Between Localized Vertical Confinement States in GaAs/AlGaAs Quantum Rings
Sign Up to like & getrecommendations! Published in 2018 at "Journal of the Korean Physical Society"
DOI: 10.3938/jkps.73.314
Abstract: We have performed time-resolved photoluminescence of dilute GaAs/AlGaAs quantum rings for increasing excitation and temperature. Although a large distance between quantum rings (200 ± 50 nm) prevents a ring-to-ring carrier transport, a decay time difference… read more here.
Keywords: carrier relaxation; quantum rings; carrier; gaas algaas ... See more keywords