Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00805-7
Abstract: This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T – Gate, and the π – Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures.… read more here.
Keywords: algan aln; aln gan; gain; gan hemts ... See more keywords
Deep-ultraviolet stimulated emission from AlGaN/AlN multiple-quantum-wells on nano-patterned AlN/sapphire templates with reduced threshold power density
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2017.06.240
Abstract: Abstract We first report deep-ultraviolet (DUV) stimulated emission by optical pumping of AlGaN/AlN multiple-quantum-wells (MQWs) on nano-patterned AlN/sapphire (NP-AlN/sapphire) templates with significant threshold power density (Pth) reduction. Thanks to nanoscale lateral overgrowth on nano-holes patterns,… read more here.
Keywords: algan aln; sapphire; aln sapphire; deep ultraviolet ... See more keywords
Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.02.037
Abstract: Abstract Deep ultraviolet (UV) emission at 260 nm has been obtained from high Al content AlGaN/AlN multi-quantum well (MQW) structures by plasma-assisted molecular beam epitaxy (PA-MBE) on AlN template on sapphire substrates. The effect of III/V… read more here.
Keywords: quantum well; emission; algan aln; mbe ... See more keywords
Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
Sign Up to like & getrecommendations! Published in 2018 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2018.05.009
Abstract: Abstract We propose a specialized gate-drain separation structure for use in investigation of the dynamic behavior of the thermal transport characteristics in AlGaN/AlN/GaN heterojunction transistors. Using this structure, the influence of the two-dimensional electron gas… read more here.
Keywords: algan aln; temperature; aln gan; gan heterojunction ... See more keywords
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-08307-0
Abstract: Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of… read more here.
Keywords: algan aln; coherent tunneling; aln gan; diode ... See more keywords
Deep-Ultraviolet AlGaN/AlN Core-Shell Multiple Quantum Wells on AlN Nanorods via Lithography-Free Method
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-19047-6
Abstract: We report deep ultraviolet (UVC) emitting core-shell-type AlGaN/AlN multiple quantum wells (MQWs) on the AlN nanorods which are prepared by catalyst/lithography free process. The MQWs are grown on AlN nanorods on a sapphire substrate by… read more here.
Keywords: algan aln; quantum; core shell; deep ultraviolet ... See more keywords
Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs
Sign Up to like & getrecommendations! Published in 2019 at "AIP Advances"
DOI: 10.1063/1.5108743
Abstract: We investigated two types of threading dislocations in high Al-composition Al0.55Ga0.45N/AlN multiple quantum well (MQW) structures grown on AlN substrate for electrically injected deep ultraviolet light-emitting diodes (LEDs). The surface morphology and defects electrical characteristics… read more here.
Keywords: algan aln; electroluminescence algan; influences screw; electroluminescence ... See more keywords
AlN/AlGaN/AlN quantum well channel HEMTs
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0145582
Abstract: We present a compositional dependence study of electrical characteristics of AlxGa1−xN quantum well channel-based AlN/AlGaN/AlN high electron mobility transistors (HEMTs) with x=0.25,0.44, and 0.58. This ultra-wide bandgap heterostructure is a candidate for next-generation radio frequency… read more here.
Keywords: aln; channel hemts; aln algan; algan aln ... See more keywords
Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa5473
Abstract: The performance of gallium nitride transistors is still limited by technological problems often related to defects and traps. In this work, virgin AlGaN/AlN/GaN HEMTs exhibiting an anomalous DC behavior accompanied by frequency dispersion in the… read more here.
Keywords: algan aln; anomalous behavior; aln gan; gan hemts ... See more keywords
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
Sign Up to like & getrecommendations! Published in 2020 at "Micromachines"
DOI: 10.3390/mi11010101
Abstract: We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically,… read more here.
Keywords: algan aln; vertical leakage; leakage; gan algan ... See more keywords
Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor
Sign Up to like & getrecommendations! Published in 2020 at "Beilstein Journal of Nanotechnology"
DOI: 10.3762/bjnano.11.166
Abstract: 1D semiconductor nanowires (NWs) have been extensively studied in recent years due to the predominant mechanical flexibility caused by a large surface-to-volume ratio and unique electrical and optical properties induced by the 1D quantum confinement… read more here.
Keywords: algan aln; aln gan; gan heterojunction; strain ... See more keywords