Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113872
Abstract: Abstract Forward gate constant voltage stress (CVS) has been performed on GaN-on-Si (200 mm) HEMTs with p-GaN gate, controlled by a Schottky metal-retracted/p-GaN junction, processed by imec with different gate process splits. In particular, the adoption… read more here.
Keywords: role algan; algan barrier; gate; gan gate ... See more keywords
The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface
Sign Up to like & getrecommendations! Published in 2019 at "Scientific Reports"
DOI: 10.1038/s41598-019-53732-y
Abstract: Carrier recombination and scattering at the semiconductor boundaries can substantially limit the device efficiency. However, surface and interface recombination is generally neglected in the nitride-based devices. Here, we study carrier recombination and diffusivity in AlGaN/GaN/sapphire… read more here.
Keywords: recombination; carrier; algan barrier; interface recombination ... See more keywords
Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs
Sign Up to like & getrecommendations! Published in 2025 at "Materials Research Express"
DOI: 10.1088/2053-1591/adb08f
Abstract: The objective of this study is to optimize the trade-off between threshold voltage (VTH) and maximum drain current (ID,max) in recessed gate AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MISHEMT) using atomic layer etching… read more here.
Keywords: algan barrier; normally recessed; algan gan; gate algan ... See more keywords
Enhancement of Sensing Performance of GaN-Based MOS-HEMT Biosensors by Graded AlGaN Barrier
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Sensors Journal"
DOI: 10.1109/jsen.2024.3409708
Abstract: To improve the sensing performance, the GaN-based metal oxide semiconductor (MOS)-high-electron mobility transistor (HEMT) biosensor with graded AlGaN barrier was proposed and investigated by Silvaco TCAD. The simulation results indicate that the proposed device exhibits… read more here.
Keywords: algan barrier; gan based; hemt biosensors; graded algan ... See more keywords
High voltage normally-off extend p-GaN gate with thin AlGaN barrier layer and AlGaN buffer transistor
Sign Up to like & getrecommendations! Published in 2021 at "MRS Communications"
DOI: 10.1557/s43579-021-00067-3
Abstract: This study investigated a normally-off p-GaN/AlGaN/GaN high electron mobility transistor with the extended p-GaN. The optimized recess depth in the AlGaN barrier under the extended region of p-GaN provides improved device characteristics. The influences of… read more here.
Keywords: voltage; depth algan; algan barrier; barrier ... See more keywords
Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
Sign Up to like & getrecommendations! Published in 2020 at "Micromachines"
DOI: 10.3390/mi11020163
Abstract: In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining… read more here.
Keywords: barrier; recessed gate; algan barrier; algan gan ... See more keywords