Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113872
Abstract: Abstract Forward gate constant voltage stress (CVS) has been performed on GaN-on-Si (200 mm) HEMTs with p-GaN gate, controlled by a Schottky metal-retracted/p-GaN junction, processed by imec with different gate process splits. In particular, the adoption… read more here.
Keywords: role algan; algan barrier; gate; gan gate ... See more keywords
The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface
Sign Up to like & getrecommendations! Published in 2019 at "Scientific Reports"
DOI: 10.1038/s41598-019-53732-y
Abstract: Carrier recombination and scattering at the semiconductor boundaries can substantially limit the device efficiency. However, surface and interface recombination is generally neglected in the nitride-based devices. Here, we study carrier recombination and diffusivity in AlGaN/GaN/sapphire… read more here.
Keywords: recombination; carrier; algan barrier; interface recombination ... See more keywords
High voltage normally-off extend p-GaN gate with thin AlGaN barrier layer and AlGaN buffer transistor
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DOI: 10.1557/s43579-021-00067-3
Abstract: This study investigated a normally-off p-GaN/AlGaN/GaN high electron mobility transistor with the extended p-GaN. The optimized recess depth in the AlGaN barrier under the extended region of p-GaN provides improved device characteristics. The influences of… read more here.
Keywords: voltage; depth algan; algan barrier; barrier ... See more keywords
Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
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DOI: 10.3390/mi11020163
Abstract: In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining… read more here.
Keywords: barrier; recessed gate; algan barrier; algan gan ... See more keywords