Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
Sign Up to like & getrecommendations! Published in 2021 at "Materials Research Bulletin"
DOI: 10.1016/j.materresbull.2021.111258
Abstract: Abstract The lighting industry undergoes a revolutionizing transformation with the introduction of III-nitride semiconductors, and "LEDs" became a household name. The solid-state light source GaN/InGaN replaced incandescent and compact fluorescent lamps. The UV region (∼200−400… read more here.
Keywords: challenges algan; based ultra; algan based; recent advances ... See more keywords
Using agglomerated Ag grid to improve the light output of near ultraviolet AlGaN-based light-emitting diode
Sign Up to like & getrecommendations! Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2016.11.015
Abstract: In this study, we introduced mesh-patterned Ag grid (width: 1520m) to enhance the light output power of near ultraviolet (385nm) AlGaN-based light emitting diode (LEDs). The Ag grid was intentionally agglomerated by annealing at 500C… read more here.
Keywords: light output; algan based; agglomerated grid; output ... See more keywords
Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via Al-composition graded quantum wells
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.04.011
Abstract: Abstract Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with step-like and Al-composition graded quantum wells have been investigated. The simulation results show that compared to DUV-LEDs with the conventional AlGaN multiple quantum wells (MQWs) structure,… read more here.
Keywords: algan based; deep ultraviolet; quantum wells; composition graded ... See more keywords
Degradation and failure mechanism of AlGaN-based UVC-LEDs
Sign Up to like & getrecommendations! Published in 2019 at "Solid-State Electronics"
DOI: 10.1016/j.sse.2019.01.004
Abstract: Abstract The degradation behaviors of flip-chip 260 nm ultraviolet light emitting diodes (UVC-LEDs) were studied using in-situ accelerated system and different analytical technologies. The optical power of LEDs stressed at a constant DC current of 20 mA… read more here.
Keywords: degradation failure; algan based; uvc leds;
High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate
Sign Up to like & getrecommendations! Published in 2018 at "ACS Photonics"
DOI: 10.1021/acsphotonics.8b00283
Abstract: An internal quantum efficiency (IQE) as high as 39% was achieved with the nonpolar a-plane AlGaN-based multiple quantum wells (MQWs) grown on the r-plane sapphire substrate with metal organic chemical vapor deposition technology. Evident fourth… read more here.
Keywords: quantum; algan based; internal quantum; plane algan ... See more keywords
Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates
Sign Up to like & getrecommendations! Published in 2020 at "CrystEngComm"
DOI: 10.1039/d0ce01491e
Abstract: Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions of V/III ratio and Si doping level, high-efficient AlGaN-based MQWs… read more here.
Keywords: quantum; algan based; multiple quantum; based multiple ... See more keywords
AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Materials Chemistry C"
DOI: 10.1039/d3tc00317e
Abstract: The structure of the AlGaN-based solar-blind UV heterojunction bipolar phototransistor (HBPT) with an AlGaN-based multiple quantum wells (MQWs) layer as the light absorption layer is proposed in this paper. On... read more here.
Keywords: heterojunction bipolar; blind heterojunction; algan based; solar blind ... See more keywords
Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5127916
Abstract: Al-rich AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) have a low light extraction efficiency, especially when the emission wavelength is shorter than 280 nm, and this is partially because of the dominant transverse-magnetic polarized light. Our results… read more here.
Keywords: quantum; algan based; emission wavelength; efficiency ... See more keywords
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0144721
Abstract: The long-term stability of ultraviolet (UV)-C light-emitting diodes (LEDs) is of major importance for many applications. To improve the understanding in this field, we analyzed the degradation of AlGaN-based UVC LEDs and modeled the variation… read more here.
Keywords: deep level; degradation algan; spectroscopy; level optical ... See more keywords
Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/aadb84
Abstract: The waveguide strain and the surface morphologies of AlGaN-based laser heterostructures emitting in the deep UV spectral range have been investigated. In particular, the impact of the AlGaN heterostructure design on the strain relaxation as… read more here.
Keywords: algan based; waveguide strain; surface morphology; strain surface ... See more keywords
Investigation on external quantum efficiency droops and inactivation efficiencies of AlGaN-based ultraviolet-c LEDs at 265–285 nm
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acd5d7
Abstract: The temperature-dependent external quantum efficiency (EQE) droops of 265 nm, 275 nm, 280 nm, and 285 nm AlGaN-based ultraviolet-c light-emitting diodes (UVC-LEDs) differed in Al contents have been comprehensively investigated. The modified ABC model (R… read more here.
Keywords: inactivation efficiencies; quantum efficiency; external quantum; algan based ... See more keywords