High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer
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DOI: 10.7567/apex.11.012101
Abstract: We increased the light-extraction efficiency (LEE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) by introducing a highly reflective photonic crystal (HR-PhC) into the surface of the p-AlGaN contact layer, thereby achieving a high external quantum… read more here.
Keywords: algan contact; algan based; layer; contact layer ... See more keywords