High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage
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DOI: 10.1186/s11671-020-03345-6
Abstract: In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. The implementation of… read more here.
Keywords: double channel; algan double; density; channel ... See more keywords