Effects of indium surfactant and MgN intermediate layers on surface morphology and crystalline quality of nonpolar a-plane AlGaN epi-layers
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DOI: 10.1016/j.ijleo.2019.162978
Abstract: Abstract High quality non-polar a -plane AlGaN epi-layers with dual MgN interlayers were successfully grown on semi-polar r -plane sapphire substrates with the indium-surfactant-assisted metal organic chemical vapor disposition (MOCVD) technology, and characterized with atomic… read more here.
Keywords: algan epi; quality; surface morphology; plane algan ... See more keywords
Properties of Si-doped a-plane AlGaN layers
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DOI: 10.1016/j.mssp.2020.105270
Abstract: Abstract The non-polar a-plane (11 2 ¯ 0) n-type AlGaN epi-layers with high electron concentration were successfully grown on r-plane (1 1 ¯ 02) sapphire substrates by metal organic chemical vapor deposition. High-resolution X-ray diffraction,… read more here.
Keywords: polar plane; non polar; plane algan; algan epi ... See more keywords
Effects of Ⅴ/Ⅲ ratio and Cp2Mg flow rate on characteristics of non-polar a-plane Mg-delta-doped p-AlGaN epi-layer
Sign Up to like & getrecommendations! Published in 2020 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2020.106632
Abstract: Abstract The non-polar a-plane Mg-delta-doped p-AlGaN epi-layers with excellent electrical conduction were achieved on r-plane sapphire substrates via metal organic chemical vapor deposition technology. The impacts of Ⅴ/Ⅲ ratio and Cp2Mg flow rate on the… read more here.
Keywords: flow rate; non polar; ratio cp2mg; algan epi ... See more keywords