On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
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DOI: 10.1088/1361-6641/ac3710
Abstract: In this work, an alternative scheme to estimate the resistivity and ionization energy of Al-rich p-AlGaN epitaxial films is developed using two large-area ohmic contacts. Accordingly, the resistivities measured using current–voltage measurements were observed to… read more here.
Keywords: iii nitride; electrical analysis; rich algan; light emitters ... See more keywords