Quantifying the Plasmonic Generation Rate of Non‐Thermal Hot Carriers with an AlGaN/GaN High‐Electron‐Mobility Transistor
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Science"
DOI: 10.1002/advs.202100362
Abstract: Plasmonic generation of hot carriers in metallic nanostructures has attracted much attention due to its great potential in several applications. However, it is highly debated whether the enhancement is due to the hot carriers or… read more here.
Keywords: thermal hot; plasmonic generation; hot carriers; non thermal ... See more keywords
Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202202019
Abstract: The extraordinary optoelectronic properties and continued commercialization of GaN enable it a promising component for neuromorphic visual system (NVS). However, typical GaN‐based optoelectronic devices demonstrated to data only show temporary and unidirectional photoresponse in ultraviolet… read more here.
Keywords: algan gan; mobility transistor; high electron; gan high ... See more keywords
A millimeter‐wave scalable small‐signal modeling approach based on FW‐EM for AlGaN/GaN HEMT up to 110 GHz
Sign Up to like & getrecommendations! Published in 2020 at "Microwave and Optical Technology Letters"
DOI: 10.1002/mop.32404
Abstract: A new scalable small‐signal model for 0.1 μm AlGaN/GaN HEMT up to 110 GHz is presented in this paper. The taps between the gate/drain manifold and fingers on the device has been investigated and included in… read more here.
Keywords: gan hemt; 110 ghz; small signal; hemt 110 ... See more keywords
High-gain AlGaN/GaN visible-blind avalanche heterojunction phototransistors
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-019-02571-8
Abstract: We report the fabrication and characterization of the visible-blind AlGaN/GaN-based avalanche heterojunction phototransistors (AHPT) with a collector-up configuration. The fabricated devices with 150-μm-diameter active area exhibit low dark currents of less than 20 pA at… read more here.
Keywords: blind avalanche; heterojunction phototransistors; visible blind; avalanche ... See more keywords
Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-018-6576-z
Abstract: We report on the selective area epitaxy (SAE) of AlGaN/GaN microstructures in stretchable geometric patterns. We have investigated dependence of Al incorporation, lateral/sidewall growth profile and electrical properties of SAE heterostructures on Al/Ga source ratio… read more here.
Keywords: algan gan; selective area; geometry; sae algan ... See more keywords
High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation
Sign Up to like & getrecommendations! Published in 2018 at "Silicon"
DOI: 10.1007/s12633-018-9767-6
Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment… read more here.
Keywords: passivation; high frequency; frequency; algan gan ... See more keywords
Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
Sign Up to like & getrecommendations! Published in 2021 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2021.153774
Abstract: Abstract The dc and high frequency performances of Al composition Graded Channel AlGaN/GaN high electron mobility transistor on GaN substrate was investigated and compared with Conventional AlGaN/GaN HEMT. The high frequency characteristics were measured on… read more here.
Keywords: algan gan; gan hemt; drain current; graded channel ... See more keywords
Highly antireflective AlGaN/GaN ultraviolet photodetectors using ZnO nanorod arrays on inverted pyramidal surfaces
Sign Up to like & getrecommendations! Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.02.139
Abstract: Abstract Highly antireflective heterostructured aluminum gallium nitride (AlGaN)/GaN ultraviolet (UV) photodetectors were demonstrated using a combination of inverted pyramidal surfaces and zinc oxide nanorod arrays (i.e., antireflective surface modification) to enhance the optical sensitivity. The… read more here.
Keywords: pyramidal surfaces; algan gan; inverted pyramidal; ultraviolet photodetectors ... See more keywords
Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
Sign Up to like & getrecommendations! Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.07.195
Abstract: Abstract III-N surface polarization compensating charge referred here to as ‘surface donors’ (SD) was analyzed in Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at… read more here.
Keywords: surface; algan gan; metal oxide; chemical ... See more keywords
Enhanced pH sensitivity of AlGaN/GaN ion-sensitive field effect transistor with Al2O3 synthesized by atomic layer deposition
Sign Up to like & getrecommendations! Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.09.072
Abstract: Abstract In this study, we evaluated the pH sensitivity enhancement of AlGaN/GaN ion-sensitive field-effect transistor (ISFET) coated by Al 2 O 3 film on the sensing area utilizing atomic layer deposition (ALD). The presence of… read more here.
Keywords: sensitive field; gan ion; ion sensitive; algan gan ... See more keywords
Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.148189
Abstract: Abstract The article proposes a new methodology that combined light-assisted Scanning Surface Potential Microscopy (SSPM), Scanning Spreading Resistance Microscopy (SSRM) and Scanning Capacitance Microscopy (SCM) techniques for the extended nanoscale characterization of the electrical properties… read more here.
Keywords: light assisted; microscopy; surface; algan gan ... See more keywords