Optical and structural properties of InGaN/GaN quantum well green laser diodes with AlGaN interlayer
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DOI: 10.1063/5.0140589
Abstract: Scanning transmission electron microscope and temperature-dependent photoluminescence were used to study the effects of AlGaN interlayer (IL) following InGaN quantum wells (QWs) on the structural and optical properties of InGaN green laser diodes (LDs) grown… read more here.
Keywords: green laser; properties ingan; laser diodes; algan interlayer ... See more keywords