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Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5026650
Abstract: We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST)…
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Keywords:
quantum disks;
temperature ultraviolet;
algan quantum;
diode junction ... See more keywords
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Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5044383
Abstract: We show that the often observed efficiency droop in AlGaN quantum well heterostructures is an internal carrier loss process, analogous to the InGaN system. We attribute this loss process to Auger recombination, with C = 2.3 × 10−30 cm6 s−1;…
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Keywords:
loss process;
recombination;
algan quantum;
carrier ... See more keywords
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Published in 2021 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ac4185
Abstract: Self-assembled AlGaN nanowires (NWs) are regarded as promising structures in the pursuit of ultraviolet photodetectors (UV PDs). However, AlGaN NW-based PDs currently suffer from degraded performance partially due to the existence of outstanding surface-related defects/traps…
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Keywords:
surface passivation;
algan quantum;
quantum disk;
passivation ... See more keywords
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Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618050056
Abstract: We report on fabrication and studies of composite heterostuctures consisting of an Al0.55Ga0.45N/Al0.8Ga0.2N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on c-sapphire substrates. The influence of a substrate temperature varied between…
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Keywords:
algan quantum;
semiconductor nanoheterostructures;
metal semiconductor;
surface nanoislands ... See more keywords