Self-aligned implanted mesa termination enables a high BFOM of 1.64 GW/cm2 and non-edge junction breakdown for vertical GaN SBDs
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0282412
Abstract: This work demonstrates a self-aligned implanted mesa termination for GaN-on-GaN vertical Schottky barrier diodes (SBDs), and studies its effects on electrical characteristics and breakdown behaviors of diodes. A self-aligned mesa termination with nitrogen implantation (SNT)… read more here.
Keywords: aligned implanted; edge; mesa termination; termination ... See more keywords