Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
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DOI: 10.1063/1.5002617
Abstract: Electron band alignment at interfaces of SiO2 with directly synthesized few-monolayer (ML) thin semiconducting MoS2 films is characterized by using field-dependent internal photoemission of electrons from the valence band of MoS2 into the oxide conduction… read more here.
Keywords: internal photoemission; alignment interfaces; monolayer; band ... See more keywords