On the enhancement of carrier injection efficiency by employing AlInN last quantum barrier in 277 nm ultraviolet light-emitting diodes
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DOI: 10.1063/5.0050345
Abstract: The AlInN last quantum barrier (LQB) has been employed instead of conventional AlGaN in ultraviolet light-emitting diodes (UV LEDs). The simulation results reveal that p-doped AlInN and un-doped AlInN LQB effectively suppressed electron leakage and… read more here.
Keywords: alinn last; quantum barrier; last quantum; alinn ... See more keywords