Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors
Sign Up to like & getrecommendations! Published in 2017 at "Electronic Materials Letters"
DOI: 10.1007/s13391-017-1606-1
Abstract: A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current (IDS,max) of 700 mA/mm at a gate bias voltage (VGS) of 0 V and a maximum transconductance (gm,max) of 190 mS/mm at drain-source voltage… read more here.
Keywords: dependent characteristics; gan high; alinn gan; high electron ... See more keywords
Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0063638
Abstract: In this paper, a high-performance multi-channel heterostructure based on lattice-matched AlInN/GaN has been reported. The stacking of five heterostructures yields a high two-dimensional electron gas density of 3.67 × 1013 cm−2 and a small sheet resistance (RSH) of… read more here.
Keywords: gan multi; multi channel; alinn gan; channel ... See more keywords
Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2723932
Abstract: Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN metal insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) with SiNx as gate dielectric have been investigated. It is found that the conduction in the reverse gate bias is due to… read more here.
Keywords: alinn gan; mis hemts; gate leakage; hemts ... See more keywords
Neutron Irradiation Effects on the Electrical Properties of Previously Electrically Stressed AlInN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2019.2908055
Abstract: This paper analyses the neutron irradiation impact on the electrical performances of unstressed, ON-state, OFF-state, and negative gate bias (NGB) stressed AlInN/GaN HEMTs. These irradiations have resulted in the creation of electron traps that are… read more here.
Keywords: gan hemts; alinn gan; stressed alinn; neutron irradiation ... See more keywords
An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects
Sign Up to like & getrecommendations! Published in 2020 at "International Journal of Electrical and Computer Engineering"
DOI: 10.11591/ijece.v10i2.pp1791-1804
Abstract: We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects.… read more here.
Keywords: analytical model; gan hemts; algan gan; alinn gan ... See more keywords
Lattice-matched AlInN/GaN bottom DBR impact on GaN-based vertical-cavity-surface-emitting laser diodes: systematical investigations.
Sign Up to like & getrecommendations! Published in 2023 at "Applied optics"
DOI: 10.1364/ao.492487
Abstract: In this paper, by using advanced numerical models, we investigate the impact of the AlN/GaN distributed Bragg reflector (DBR) and AlInN/GaN DBR on stimulated radiative recombination for GaN-based vertical-cavity-surface-emitting lasers (VCSELs). According to our results,… read more here.
Keywords: gan dbr; gan based; alinn gan; based vertical ... See more keywords