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Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5120302
Abstract: We propose a type-II AlInN/ZnGeN2 quantum well (QW) structure serving as the active region for ultraviolet (UV) laser diodes. A remarkably low threshold current density can be achieved using the type-II AlInN/ZnGeN2 QW structure, providing…
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Keywords:
type alinn;
ultraviolet laser;
alinn zngen2;
laser diodes ... See more keywords