Three-dimensional analytical modeling for small-geometry AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs)
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-020-01498-2
Abstract: A simple physics-based three-dimensional (3-D) analytical model for AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs) is presented. The model accurately predicts the short-channel effects (SCEs) in the channel region for various device dimensions, viz. channel length and… read more here.
Keywords: double gate; alinsb alsb; geometry; alsb insb ... See more keywords