Growth and Stress Analysis of Spontaneous Nucleation c‐Plane Bulk AlN Crystals by a PVT Method
Sign Up to like & getrecommendations! Published in 2020 at "Crystal Research and Technology"
DOI: 10.1002/crat.202000118
Abstract: AlN is a kind of promising semiconductor material for high‐efficiency optoelectronic devices and high‐power high‐frequency electronic devices. In this work, high‐quality c‐plane AlN single crystal with low‐stress is grown on tungsten (W) substrate using a… read more here.
Keywords: aln; stress; aln crystals; growth ... See more keywords
Piezoelectric ultra-sensitive aluminum nitride thin film on flexible aluminum substrate
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Materials Science"
DOI: 10.1007/s10853-017-1566-8
Abstract: AbstractDevelopment of ultra-sensitive mechanical pressure sensors is required for various technological fields such as medical diagnosis and gas leakage. Aluminum nitride (AlN) thin films deposited by rf reactive sputtering on flexible aluminum substrates show a… read more here.
Keywords: aluminum nitride; flexible aluminum; aln; film ... See more keywords
Effect of NH4F additive on purification of AlN ceramics
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-017-6368-x
Abstract: In order to overcome the purification difficulty of aluminum nitride (AlN) ceramics, the sintering of AlN ceramics with ammonium fluoride (NH4F) as an additive had been studied. The results demonstrate that the addition of NH4F… read more here.
Keywords: additive purification; effect nh4f; aln; oxygen content ... See more keywords
A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-019-01502-x
Abstract: Piezoelectric materials have been introduced to transistor gate stacks to improve MOSFET behaviour and develop sensor applications. In this work, we present an approach to a partly industrial field effect transistor, with a gate stack… read more here.
Keywords: field effect; gate; aln; sensor ... See more keywords
Precipitation Behavior of AlN in High-Magnetic-Induction Grain-Oriented Silicon Steel Slab
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DOI: 10.1007/s11837-019-03623-4
Abstract: The magnetic properties of high-magnetic-induction grain-oriented silicon steel are strongly related to the precipitation and dissolution of the AlN inhibitor. The three-dimensional morphology, size, quantity, and microstructure of AlN in oriented silicon steel slabs have… read more here.
Keywords: oriented silicon; aln; slab; silicon steel ... See more keywords
A novel effervescent formulation of oral weekly alendronate (70 mg) improves persistence compared to alendronate tablets in post-menopausal women with osteoporosis
Sign Up to like & getrecommendations! Published in 2021 at "Aging Clinical and Experimental Research"
DOI: 10.1007/s40520-020-01777-9
Abstract: Background A novel effervescent buffered solution of 70 mg alendronate (ALN-EX) was developed to improve upper gastrointestinal (GI) tolerability over alendronate tablets (ALN-T). Whether a better GI tolerability can improve persistence remains to be determined. Aim… read more here.
Keywords: menopausal women; post menopausal; novel effervescent; aln ... See more keywords
High-quality TiN/AlN thin film heterostructures on c-sapphire
Sign Up to like & getrecommendations! Published in 2018 at "Acta Materialia"
DOI: 10.1016/j.actamat.2017.11.044
Abstract: Abstract We have developed TiN/AlN/c-sapphire epitaxial heterostructures and compared it with TiN/c-sapphire epitaxial heterostructures, needed for GaN-based LEDs and lasers. AlN is used as a buffer layer to provide a high misfit strain and facilitate… read more here.
Keywords: tin aln; tin sapphire; tin; aln ... See more keywords
Influence of crystal anisotropy on deformation behaviors in nanoscratching of AlN
Sign Up to like & getrecommendations! Published in 2019 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2019.05.218
Abstract: Abstract In this paper molecular dynamics simulations are carried out to study the influence of crystal anisotropy on deformation behaviors in the nanoscratching process of AlN. We investigate the scratching process of AlN(0001), AlN(10 1… read more here.
Keywords: anisotropy deformation; surface; aln; deformation behaviors ... See more keywords
Interface asymmetry in AlN/Ni and Ni/AlN interfaces: A study using resonant soft X-ray reflectivity
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DOI: 10.1016/j.apsusc.2020.147199
Abstract: Abstract X-ray waveguides are layered structures consisting of a low Z material sandwiched between two high Z materials. The performance of such waveguide structures is influenced by quality of interfaces formed by low and high… read more here.
Keywords: ray reflectivity; aln; interface; ray ... See more keywords
Alendronate improves bone density and type I collagen accumulation but increases the amount of pentosidine in the healing dental alveolus of ovariectomized rabbits.
Sign Up to like & getrecommendations! Published in 2019 at "Bone"
DOI: 10.1016/j.bone.2018.09.022
Abstract: BACKGROUND It has been shown that the oral aminobisphosphonate sodium alendronate (ALN) therapy reduces the risk of main fractures in osteoporotic women, but its effect on the jaw bones is poorly known. Here, we hypothesized… read more here.
Keywords: collagen; pentosidine; bone; aln ... See more keywords
Three dimensional AlN skeleton-reinforced highly oriented graphite flake composites with excellent mechanical and thermophysical properties
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DOI: 10.1016/j.carbon.2018.01.091
Abstract: Abstract To obtain light, strong materials with high thermal conductivity and low coefficient of thermal expansion (CTE), three-dimensional (3D) AlN ceramic skeleton reinforced highly oriented graphite flake (AlN/GF) composites were successfully prepared by combining vacuum… read more here.
Keywords: highly oriented; oriented graphite; three dimensional; skeleton ... See more keywords