Growth, structural and electrical properties of AlN/Si (111) for futuristic MEMS applications
Sign Up to like & getrecommendations! Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105567
Abstract: Abstract This paper presents the structural, optical, and electrical characteristics of AlN thin films on Si (111) substrate grown by DC magnetron sputtering technique for MEMS applications. The grown AlN thin films (thickness: 680, 900,… read more here.
Keywords: structural electrical; films varies; aln 111; mems applications ... See more keywords
Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5100066
Abstract: InN epilayer has been grown by plasma-assisted molecular beam epitaxy on the AlN/n-Si (111) substrate. The self-powered photodetection has been carried out with an infra-red (IR) laser ( λ = 1550 nm, power density ∼… read more here.
Keywords: barrier heights; barrier; inn aln; aln 111 ... See more keywords