Electrical characterization of high k-dielectrics for 4H-SiC MIS devices
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DOI: 10.1016/j.mssp.2019.03.025
Abstract: Abstract We report promising results regarding the possible use of AlN or Al2O3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD)… read more here.
Keywords: al2o3; electrical characterization; aln al2o3; characterization high ... See more keywords